Study of defects in GaN films by cross-sectional cathodoluminescence

被引：25

作者：

Zaldivar, MH ^{[1
]}

Fernandez, P

Piqueras, J

机构：

[1] Univ Complutense, Fac Fis, Dept Fis Mat, E-28040 Madrid, Spain

[2] Univ Autonoma Puebla, Inst Fis, Puebla 72570, Mexico

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 05期

关键词：

D O I：

10.1063/1.366634

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cathodoluminescence (CL) in the scanning electron microscope has been used to study cross-sectional samples on GaN epitaxial films grown on sapphire. Increased CL emission, attributed to the presence of stacking faults and decorated dislocations, is observed in a region of the buffer layer close to the film-substrate interface, In the epilayers also a region of enhanced emission is observed which is partially caused by Si doping and in which structural defects are involved. Cross-sectional CL appears as a useful method to reveal features of the spatial distribution of luminescence, not detectable by plan-view measurements. (C) 1998 American Institute of Physics.

引用

页码：2796 / 2799

页数：4

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