Elastic limit for surface step dislocation nucleation in face-centered cubic metals: Temperature and step height dependence

被引：53

作者：

Brochard, S. ^{[1
]}

Hirel, P. ^{[1
]}

Pizzagalli, L. ^{[1
]}

Godet, J. ^{[1
]}

机构：

[1] Univ Poitiers, CNRS, UPR 3346, Inst Pprime,Dept Phys & Mecan Mat,ENSMA, F-86962 Futuroscope, France

来源：

ACTA MATERIALIA | 2010年 / 58卷 / 12期

关键词：

Dislocation nucleation; Plastic deformation; MD simulations; Surface Thermally activated processes; MINIMUM ENERGY PATHS; SADDLE-POINTS; BAND METHOD; ALUMINUM; GROWTH; DEFORMATION; TRANSITION; PLASTICITY; CRYSTAL; SILICON;

D O I：

10.1016/j.actamat.2010.04.009

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influences of surface step state and temperature on the elastic limit for dislocation nucleation from a surface step were analyzed by means of atomic scale simulations in face-centered cubic metals. When varying the step height, two regimes were found: for smaller steps, local effects dominate, whereas for larger steps, the stress concentration prevails. The differences observed for the elastic limit were correlated to relevant properties of the different potentials. Finally, for aluminum, the implication of the activation parameters in the nucleation strain was studied in greater detail. This study is particularly relevant to nanostructures, where plasticity is most often governed by dislocation nucleation rather than dislocation multiplication. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：4182 / 4190

页数：9

共 63 条

[1] Dislocation introduction in the initial stages of MBE growth of highly strained In0.30Ga0.70As/GaAs structures [J].

Androussi, Y ;

Lefebvre, A ;

Benabbas, T ;

Francois, P ;

Delamarre, C ;

Laval, JY ;

Dubon, A .

JOURNAL OF CRYSTAL GROWTH, 1996, 169 (02) :209-216

[2] Atomistic study of dislocation cores in aluminium and copper [J].

Aslanides, A ;

Pontikis, V .

COMPUTATIONAL MATERIALS SCIENCE, 1998, 10 (1-4) :401-405

[3] ON THE NUCLEATION OF DISLOCATIONS AT A CRYSTAL-SURFACE [J].

BELTZ, GE ;

FREUND, LB .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1993, 180 (02) :303-313

[4] Tight-binding calculations of stacking energies and twinnability in fcc metals [J].

Bernstein, N ;

Tadmor, EB .

PHYSICAL REVIEW B, 2004, 69 (09)

[5] Direct observations of dislocation half-loops inserted from the surface of the GeSi heteroepitaxial film [J].

Bolkhovityanov, YB ;

Deryabin, AS ;

Gutakovskii, AK ;

Revenko, MA ;

Sokolov, LV .

APPLIED PHYSICS LETTERS, 2004, 85 (25) :6140-6142

[6] Dislocation nucleation from surface steps:: atomistic simulation in aluminium [J].

Brochard, S ;

Beauchamp, P ;

Grilhé, J .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 2000, 80 (03) :503-524

[7] Anomalous plastic deformation at surfaces: Nanoindentation of gold single crystals [J].

Corcoran, SG ;

Colton, RJ ;

Lilleodden, ET ;

Gerberich, WW .

PHYSICAL REVIEW B, 1997, 55 (24) :16057-16060

[8] Growth morphology evolution and dislocation introduction in the InGaAs/GaAs heteroepitaxial system [J].

Cullis, AG ;

Pidduck, AJ ;

Emeny, MT .

JOURNAL OF CRYSTAL GROWTH, 1996, 158 (1-2) :15-27

[9] SEMIEMPIRICAL, QUANTUM-MECHANICAL CALCULATION OF HYDROGEN EMBRITTLEMENT IN METALS [J].

DAW, MS ;

BASKES, MI .

PHYSICAL REVIEW LETTERS, 1983, 50 (17) :1285-1288

[10] INTERATOMIC POTENTIALS FROM 1ST-PRINCIPLES CALCULATIONS - THE FORCE-MATCHING METHOD [J].

ERCOLESSI, F ;

ADAMS, JB .

EUROPHYSICS LETTERS, 1994, 26 (08) :583-588

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