Direct observations of dislocation half-loops inserted from the surface of the GeSi heteroepitaxial film

被引：17

作者：

Bolkhovityanov, YB ^{[1
]}

Deryabin, AS

Gutakovskii, AK

Revenko, MA

Sokolov, LV

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia

[2] Tomsk State Univ, Tomsk 634050, Russia

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 25期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1063/1.1839271

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The initial stage of relaxation of mechanical stresses in the Ge0.32Si0.68/Si(001) heterostructure grown by low-temperature (300degreesC) molecular-beam epitaxy is studied by means of transmission electron microscopy. Dislocation half-loops propagating from the film surface and generating misfit dislocations during expansion are visualized. (C) 2004 American Institute of Physics.

引用

页码：6140 / 6142

页数：3

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