Nanoholes fabricated by self-assembled gallium nanodrill on GaAs(100)

被引：211

作者：

Wang, Zh. M. ^{[1
]}

Liang, B. L. ^{[1
]}

Sablon, K. A. ^{[1
]}

Salamo, G. J. ^{[1
]}

机构：

[1] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 11期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2713745

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Self-assembled nanodrill technology based on droplet epitaxy growth was developed to obtain nanoholes on a GaAs(100) surface. In this technology, the gallium droplets act like "electrochemical drills" etching away the GaAs substrate beneath to give rise to nanoholes more than 10 nm deep. The driving force of the nanodrill is attributed to the arsenic desorption underneath the gallium droplet at high growth temperatures and Ga-rich condition. This nanodrill technology provides an easy and flexible method to fabricate nanohole templates on GaAs(100) surface and has great potential for developing quantum dots and quantum dot molecules for quantum computation applications. (c) 2007 American Institute of Physics.

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