SiO2 and Si nanoscale patterning with an atomic force microscope

The use of an atomic force microscope (AFM) as a nanolithographic tool is demonstrated. A photoresist layer several nanometre thin is indented by the vibrating AFM tip, where software control switches the tapping force from the imaging to the patterning mode. The resist pattern is transferred into a 10 nm SiO2 layer on Si(100) by wet chemical etching resulting in 20-40 nm wide lines. Subsequent transfer into the Si substrate using anisotropic KOH etching formed 60 nm wide V grooves. (C) 1998 Academic Press Limited.