Sharpened electron beam deposited tips for high resolution atomic force microscope lithography and imaging

被引：125

作者：

Wendel, M

Lorenz, H

Kotthaus, JP

机构：

[1] Sektion Physik, Ludwig-Maximilians-Universität München

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 25期

关键词：

D O I：

10.1063/1.115365

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We employ the vibrating tip of an atomic force microscope as a lithographic tool to mechanically pattern a thin photoresist layer covering a GaAs-AlGaAs heterostructure. High aspect ratio electron beam deposited tips, additionally sharpened in an oxygen plasma, are used to minimize the dimensions of the fabricated quantum electronic devices. The fabrication parameters of the tips and the sharpening process are investigated. With these ultrasharp tips we are able to produce lines and holes with periods down to 9 nm in photoresist. In addition, the very sharp tips yield substantial improvements in the imaging mode. (C) 1995 American Institute of Physics.

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页码：3732 / 3734

页数：3

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