Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

被引：191

作者：

Dai, Qi ^{[1
,2
]}

Shan, Qifeng ^{[1
,2
]}

Wang, Jing ^{[1
,2
]}

Chhajed, Sameer ^{[1
,2
]}

Cho, Jaehee ^{[1
,2
]}

Schubert, E. Fred ^{[1
,2
]}

Crawford, Mary H. ^{[3
]}

Koleske, Daniel D. ^{[3
]}

Kim, Min-Ho ^{[4
]}

Park, Yongjo ^{[4
]}

机构：

[1] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA

[2] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

[3] Sandia Natl Labs, Albuquerque, NM 87185 USA

[4] Samsung LED, R&D Inst, Suwon 443743, South Korea

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 13期

关键词：

D O I：

10.1063/1.3493654

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We model the carrier recombination mechanisms in GaInN/GaN light-emitting diodes as R=An + Bn-2 + Cn(3) + f(n), where f(n) represents carrier leakage out of the active region. The term f(n) is expanded into a power series and shown to have higher-than-third-order contributions to the recombination. The total third-order nonradiative coefficient (which may include an f(n) leakage contribution and an Auger contribution) is found to be 8 x 10(-29) cm(6) s(-1). Comparison of the theoretical ABC + f(n) model with experimental data shows that a good fit requires the inclusion of the f(n) term. (C) 2010 American Institute of Physics. [doi:10.1063/1.3493654]

引用

页数：3

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