Near room temperature droplet epitaxy for fabrication of InAs quantum dots

被引：98

作者：

Kim, JS ^{[1
]}

Koguchi, N ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050047, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 24期

关键词：

D O I：

10.1063/1.1839642

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By using the droplet epitaxy method, we succeed in fabricating the InAs quantum dots (QDs) with the spatial density of 4x10(10)/cm(2) and an average lateral size of 20 nm on GaAs (001) at the droplets deposition temperature of 50 degreesC and subsequent annealing process under As-4 flux. These QDs shows the intense photoluminescence even at room temperature indicating that high-quality InAs QDs can be fabricated by near room temperature droplets deposition and crystallization process by 400 degreesC in situ annealing. (C) 2004 American Institute of Physics.

引用

页码：5893 / 5895

页数：3

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