Static and dynamic charges: Changing perspectives and aims in electron microscopy

被引：12

作者：

Howie, A ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

MICROSCOPY AND MICROANALYSIS | 2004年 / 10卷 / 06期

关键词：

charging; ESEM; scanning capacitance microscopy; cathodoluminescence;

D O I：

10.1017/S1431927604040747

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the context of electron microscopists' changing attitudes to charging effects, some basic aspects of these phenomenona are surveyed. Methods of mapping internal charge distributions such as doping levels in semiconductors, trap distributions, or internal electric fields in insulators are discussed.

引用

页码：685 / 690

页数：6

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