Infrared characterization of hafnium oxide grown by atomic layer deposition using ozone as the oxygen precursor

被引：35

作者：

Wang, Y. ^{[1
]}

Dai, M. ^{[1
]}

Ho, M. -T. ^{[1
]}

Wielunski, L. S. ^{[1
]}

Chabal, Y. J. ^{[1
]}

机构：

[1] Rutgers State Univ, Surface Modificat Lab, Piscataway, NJ 08855 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 02期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2430908

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

HfO2 growth on H-terminated Si surfaces by atomic layer deposition (ALD) is studied with in situ Fourier transform infrared spectroscopy and ex situ Rutherford backscattering, using tetrakis-(ethyl-methyl-amino) hafnium and ozone as the hafnium and oxygen precursors, and compared to water-vapor-based ALD growth. The reaction pathways are different for the two oxygen precursors, leading to a lower growth rate for ozone (similar to 0.05 nm/cycle) than for water-based growth and to incorporation of different impurities in the HfO2 film. Furthermore, interfacial SiO2 is readily formed with ozone at the growth temperature (similar to 100 degrees C), in contrast to water-based HfO2 growth. (c) 2007 American Institute of Physics.

引用

页数：3

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