Some recent developments in the MOCVD and ALD of high-κ dielectric oxides

被引：75

作者：

Jones, AC

Aspinall, HC

Chalker, PR

Potter, RJ

Kukli, K

Rahtu, A

Ritala, M

Leskelä, M

机构：

[1] Univ Liverpool, Dept Chem, Liverpool L69 3ZD, Merseyside, England

[2] Univ Liverpool, Dept Mat Sci & Engn, Liverpool L69 3BX, Merseyside, England

[3] Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland

[4] Epichem Ltd, Wirral CH62 3QF, Merseyside, England

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2004年 / 14卷 / 21期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1039/b405525j

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A range of high-permittivity (kappa) dielectric oxides are currently being investigated as alternatives to SiO2 as the dielectric insulating layer in sub-0.1 mum CMOS technology. Metalorganic chemical vapour deposition (MOCVD) and atomic layer deposition (ALD) are promising techniques for the deposition of these high-kappa dielectric oxides. Some recent developments in precursors for the MOCVD and ALD of ZrO2, HfO2, Zr- and Hf-silicate and the rare earth oxides M2O3 (M=Pr, La, Gd, Nd) are discussed.

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页码：3101 / 3112

页数：12

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