Growth of GaSb layers on GaAs (001) substrate by molecular beam epitaxy

被引：22

作者：

Hao, Ruiting ^{[1
]}

Xu, Yingqiang ^{[1
]}

Zhou, Zhiqiang ^{[1
]}

Ren, Zhengwei ^{[1
]}

Ni, Haiqiao ^{[1
]}

He, Zhenhong ^{[1
]}

Niu, Zhichuan ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2007年 / 40卷 / 04期

关键词：

D O I：

10.1088/0022-3727/40/4/025

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaSb 1 mu m-thick layers were grown by molecular beam epitaxy on GaAs (001). The effects of the growth conditions on the crystalline quality, surface morphology, electrical properties and optical properties were studied by double crystalline x-ray diffraction, atomic force microscopy, Hall measurement and photoluminescence spectroscopy, respectively. It was found that the surface roughness and hole mobility are highly dependent on the antimony-to-gallium flux ratios and growth temperatures. The crystalline quality, electrical properties and optical properties of GaSb layers were also studied as functions of growth rate, and it was found that a suitably low growth rate is beneficial for the crystalline quality and electrical and optical properties. Better crystal quality GaSb layers with a minimum root mean square surface roughness of 0.1 nm and good optical properties were obtained at a growth rate of 0.25 mu m h(-1).

引用

页码：1080 / 1084

页数：5

共 14 条

[1] W-structured type-II superlattice based long and very-long wavelength infrared photodiodes. [J].