HIGH-PURITY GASB EPITAXIAL LAYERS GROWN FROM SB-RICH SOLUTIONS

被引：53

作者：

ANAYAMA, C

TANAHASHI, T

KUWATSUKA, H

NISHIYAMA, S

ISOZUMI, S

NAKAJIMA, K

机构：

[1] Fujitsu Laboratories, Atsugi, Atsugi 243-01

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 03期

关键词：

D O I：

10.1063/1.102842

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Undoped GaSb crystals with mirror-like surfaces were obtained by liquid phase epitaxy from Sb-rich solutions. The background carrier concentration strongly depended on the growth temperature. By growing crystals below 600 °C, we can obtain a GaSb crystal with a background carrier concentration under 1016 cm-3. Photoluminescence studies showed that native defects related to Sb vacancies were significantly reduced in the GaSb crystal.

引用

页码：239 / 240

页数：2

共 7 条

[1] INVESTIGATION INTO APPARENT PURITY LIMIT IN GASB [J].