LIQUID-PHASE EPITAXIAL-GROWTH OF ALXGA1-XSB FROM SB-RICH SOLUTION

被引：14

作者：

KUWATSUKA, H

TANAHASHI, T

ANAYAMA, C

NISHIYAMA, S

MIKAWA, T

NAKAJIMA, K

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 94卷 / 04期

关键词：

D O I：

10.1016/0022-0248(89)90126-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：923 / 928

页数：6

共 16 条

[1]

ANIYAMA T, UNPUB

[2]

BRANTLEY WA, 1973, J APPL PHYS, V44

[3] DOUBLE-CRYSTAL SPECTROMETER MEASUREMENTS OF LATTICE-PARAMETERS AND X-RAY TOPOGRAPHY ON HETEROJUNCTIONS GAAS-ALXGA1-XAS [J].

ESTOP, E ;

IZRAEL, A ;

SAUVAGE, M .

ACTA CRYSTALLOGRAPHICA SECTION A, 1976, 32 (JUL1) :627-&

[4]

GHEZ R, 1972, J CRYST GROWTH, V19, P153

[5] GA1-XALXSB AVALANCHE PHOTO-DIODES - RESONANT IMPACT IONIZATION WITH VERY HIGH RATIO OF IONIZATION COEFFICIENTS [J].

HILDEBRAND, O ;

KUEBART, W ;

BENZ, KW ;

PILKUHN, MH .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :284-288

[6] AL-GA-SB TERNARY PHASE-DIAGRAM AND ITS APPLICATION TO SOLUTION GROWTH [J].

JOULLIE, A ;

GAUTIER, P ;

MONTEIL, E .

JOURNAL OF CRYSTAL GROWTH, 1979, 47 (01) :100-108

[7] PHOTOLUMINESCENCE STUDIES OF LPE ALXGA1-XSB [J].

KITAMURA, N ;

YAMAMOTO, H ;

MAEDA, Y ;

USAMI, A ;

WADA, T .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (05) :318-320

[8] THE PREPARATION AND PROPERTIES OF IN-GA-AS-P BATCH PREPARED MELTS (BATCH MELTS) [J].

KUSUNOKI, T ;

AKITA, K ;

NISHITANI, Y .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (03) :539-542

[9] LIQUID-PHASE-EPITAXIAL GROWTH OF GA0.96AL0.04SB - ELECTRICAL AND PHOTOELECTRICAL CHARACTERIZATIONS [J].

LUQUET, H ;

GOUSKOV, L ;

PEROTIN, M ;

JEAN, A ;

RJEB, A ;

ZAROURI, T ;

BOUGNOT, G .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) :3582-3591

[10] LIQUID-PHASE EPITAXY OF ALYGA1-YAS1-XSBX AND IMPORTANCE OF STRAIN EFFECTS NEAR MISCIBILITY GAP [J].

NAHORY, RE ;

POLLACK, MA ;

BEEBE, ED ;

DEWINTER, JC ;

ILEGEMS, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (07) :1053-1058

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