THE PREPARATION AND PROPERTIES OF IN-GA-AS-P BATCH PREPARED MELTS (BATCH MELTS)

被引:4
作者
KUSUNOKI, T
AKITA, K
NISHITANI, Y
机构
关键词
D O I
10.1016/0022-0248(82)90375-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:539 / 542
页数:4
相关论文
共 14 条
[1]  
Crank J., 1975, MATH DIFFUSION
[2]   LATTICE-CONSTANT, BANDGAP, THICKNESS, AND SURFACE-MORPHOLOGY OF INGAASP-INP LAYERS GROWN BY STEP-COOLING, EQUILIBRIUM-COOLING, SUPERCOOLING AND 2-PHASE-SOLUTION GROWTH TECHNIQUES [J].
FENG, M ;
COOK, LW ;
TASHIMA, MM ;
STILLMAN, GE .
JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (02) :241-280
[3]   ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M [J].
HSIEH, JJ ;
ROSSI, JA ;
DONNELLY, JP .
APPLIED PHYSICS LETTERS, 1976, 28 (12) :709-711
[4]  
HSIEH JJ, 1977, I PHYS C SER B, V33, P74
[5]   V-GROOVED SUBSTRATE BURIED HETEROSTRUCTURE INGAASP-INP LASER [J].
ISHIKAWA, H ;
IMAI, H ;
TANAHASHI, T ;
NISHITANI, Y ;
TAKUSAGAWA, M ;
TAKAHEI, K .
ELECTRONICS LETTERS, 1981, 17 (13) :465-467
[6]   PHASE-DIAGRAM OF IN-GA-AS-P-QUATERNARY SYSTEM AND LPE GROWTH-CONDITIONS FOR LATTICE MATCHING ON INP SUBSTRATES [J].
NAKAJIMA, K ;
KUSUNOKI, T ;
AKITA, K ;
KOTANI, T .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (01) :123-127
[7]   COMPOSITION DEPENDENCE OF THE BAND-GAPS OF IN1-XGAXAS1-YPY QUATERNARY SOLIDS LATTICE MATCHED ON INP SUBSTRATES [J].
NAKAJIMA, K ;
YAMAGUCHI, A ;
AKITA, K ;
KOTANI, T .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) :5944-5950
[8]   SELF-ALIGNED STRUCTURE INGAASP-INP DH LASERS [J].
NISHI, H ;
YANO, M ;
NISHITANI, Y ;
AKITA, Y ;
TAKUSAGAWA, M .
APPLIED PHYSICS LETTERS, 1979, 35 (03) :232-234
[9]   GAINASP-INP DOUBLE HETEROSTRUCTURE LASERS PREPARED BY A NEW LPE APPARATUS [J].
OE, K ;
SUGIYAMA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (10) :2003-2004
[10]   INP-INGAASP AVALANCHE PHOTO-DIODES WITH NEW GUARD RING STRUCTURE [J].
OSAKA, F ;
NAKAZIMA, K ;
KANEDA, T ;
SAKURAI, T .
ELECTRONICS LETTERS, 1980, 16 (18) :716-716