Secondary ion yield changes on rippled interfaces

被引:19
作者
Makeev, MA [1 ]
Barabasi, AL [1 ]
机构
[1] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA
关键词
D O I
10.1063/1.120932
中图分类号
O59 [应用物理学];
学科分类号
摘要
Sputter erosion often leads to the development of surface ripples. Here we investigate the effect of the ripples on the secondary ion yield, by calculating the yield as a function of the microscopic parameters characterizing the ion cascade (such as penetration depth, widths of the deposited energy distribution) and the ripples (ripple amplitude, wavelength), We find that ripples can strongly enhance the yield, with the magnitude of the effect depending on the interplay between the ion and ripple characteristics. Furthermore, pre compare our predictions with existing experimental results. (C) 1998 American Institute of Physics.
引用
收藏
页码:906 / 908
页数:3
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