Validation of density-functional versus density-functional plus U approaches for oxide ultrathin films

被引:39
作者
Barcaro, Giovanni [1 ]
Thomas, Iorwerth Owain [1 ]
Fortunelli, Alessandro [1 ]
机构
[1] CNR, IPCF, Mol Modeling Lab, I-56124 Pisa, Italy
关键词
electronic density of states; II-VI semiconductors; lattice constants; monolayers; nickel compounds; scanning tunnelling microscopy; semiconductor thin films; titanium compounds; wide band gap semiconductors; zinc compounds; GENERALIZED GRADIENT APPROXIMATION; ELECTRONIC-STRUCTURE; MONOLAYER PHASE; GREENS-FUNCTION; THIN-FILMS; NIO; EXCHANGE; GROWTH; PHOTOEMISSION; SURFACE;
D O I
10.1063/1.3366689
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A comparison between available experimental information and the predictions of density-functional and density-functional+U approaches is presented for oxide ultrathin films grown on single-crystal metal surfaces. Prototypical examples of monolayer phases of an ionic oxide (ZnO), a late transition metal oxide (NiO), and an early transition metal oxide (TiO2) are considered. The aim is to validate the theoretical approaches, focusing on the prediction of structural features and the reproduction of scanning tunneling microscopy images, rationalized in terms of the local density of states of the systems. It is found that it is possible to reasonably estimate the optimal lattice constant of ultrathin supported films and that the inclusion of the Hubbard U term appreciably improves the accuracy of theoretical predictions, especially in the case of nonpolar ultrathin phases of a transition metal oxide. Moreover, the optimal value of U for the oxide layer at the interface with the metal support is found to differ from that appropriate for the bulk oxide, as a consequence of the intermixing of oxide and support electronic states and screening effects.
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页数:9
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