Atomic origin of deep levels in p-type GaN: Theory

被引：32

作者：

Chadi, DJ

机构：

[1] NEC Research Institute, Princeton

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 20期

关键词：

D O I：

10.1063/1.120232

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Experimentally identified deep levels in p-type GaN at approximately 0.9-1, 1. 1.4, and 1.8-2 eV above the valence-band maximum have been attributed to Ga vacancies. From the results of first-principles calculations, we find that from both energetic and electronic level structure standpoints it is necessary to consider the structural modification V-Ga-->N-anti + V-N, resulting from the transfer of a nearest-neighbor N atom to a Go-vacancy site (V-Ga) to explain the levels at 1 and 2 eV. Isolated N-antisite (N-anti) and nitrogen-vacancy (V-N) defects are found to give rise to additional deep levels at 1.4 and 0.8 eV, respectively. (C) 1997 American Institute of Physics.

引用

页码：2970 / 2971

页数：2

共 27 条

[1] BINDING AND FORMATION ENERGIES OF NATIVE DEFECT PAIRS IN GAAS [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1986, 33 (10) :7346-7348

[2] Yellow luminescence and related deep states in undoped GaN [J].

Calleja, E ;

Sanchez, FJ ;

Basak, D ;

SanchezGarcia, MA ;

Munoz, E ;

Izpura, I ;

Calle, F ;

Tijero, JMG ;

SanchezRojas, JL ;

Beaumont, B ;

Lorenzini, P ;

Gibart, P .

PHYSICAL REVIEW B, 1997, 55 (07) :4689-4694

[3] SPECIAL POINTS IN BRILLOUIN ZONE [J].

CHADI, DJ ;

COHEN, ML .

PHYSICAL REVIEW B, 1973, 8 (12) :5747-5753

[4]

CHADI DJ, 1997, P 19 INT C DEF SEM

[5] OPTICALLY DETECTED MAGNETIC-RESONANCE OF GAN FILMS GROWN BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION [J].

GLASER, ER ;

KENNEDY, TA ;

DOVERSPIKE, K ;

ROWLAND, LB ;

GASKILL, DK ;

FREITAS, JA ;

KHAN, MA ;

OLSON, DT ;

KUZNIA, JN ;

WICKENDEN, DK .

PHYSICAL REVIEW B, 1995, 51 (19) :13326-13336

[6]

Gotz W, 1996, APPL PHYS LETT, V68, P3470, DOI 10.1063/1.116075

[7] A donorlike deep level defect in Al0.12Ga0.88N characterized by capacitance transient spectroscopies [J].

Gotz, W ;

Johnson, NM ;

Bremser, MD ;

Davis, RF .

APPLIED PHYSICS LETTERS, 1996, 69 (16) :2379-2381

[8] Properties of the yellow luminescence in undoped GaN epitaxial layers [J].

Hofmann, DM ;

Kovalev, D ;

Steude, G ;

Meyer, BK ;

Hoffmann, A ;

Eckey, L ;

Heitz, R ;

Detchprom, T ;

Amano, H ;

Akasaki, I .

PHYSICAL REVIEW B, 1995, 52 (23) :16702-16706

[9] MOMENTUM-SPACE FORMALISM FOR THE TOTAL ENERGY OF SOLIDS [J].

IHM, J ;

ZUNGER, A ;

COHEN, ML .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (21) :4409-4422

[10] Metastability and persistent photoconductivity in Mg-doped p-type GaN [J].

Johnson, C ;

Lin, JY ;

Jiang, HX ;

Khan, MA ;

Sun, CJ .

APPLIED PHYSICS LETTERS, 1996, 68 (13) :1808-1810

← 1 2 3 →