Metalorganic chemical vapor deposition of SnO2 thin films using tetraethyltin:: Growth and characterization

被引：4

作者：

Amjoud, M

Maury, F

Elaatmani, M

机构：

[1] Univ Cadi Ayyad, Dept Chim, Fac Sci & Tech Gueliz, FST Marrakech, Marrakech 40000, Morocco

[2] Ecole Natl Super Chim, CNRS INPT, F-31077 Toulouse, France

[3] Univ Cadi Ayyad, Fac Sci Semlalia, Lab Chim Solide Mineral, Dept Chim, Marrakech 40000, Morocco

来源：

ANNALES DE CHIMIE-SCIENCE DES MATERIAUX | 1998年 / 23卷 / 1-2期

关键词：

D O I：

10.1016/S0151-9107(98)80091-3

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Undoped conducting thin films of SnO2 were deposited at low temperature (320-470 degrees C) onto various substrates (SiO2, Si) by low pressure MOCVD using SnEt4 and oxygen as precursors. The composition, and the structure of the films have been investigated using different techniques (SEM, XRD, EDS, XPS) as a function of the deposition conditions. Typically, they have an electrical resistivity of 5x10(-3) Omega cm and a light transmission higher than 80% in the 400-800 nm wavelength region. Correlations between their properties, their structural features and the growth conditions are discussed.

引用

页码：355 / 358

页数：4

共 9 条

[1]

CHAMBOULEYRON L, 1981, J PHYSIQUE, V42, P1009

[2] THE PREPARATION AND PROPERTIES OF PECVD-MADE SNO2 THIN-FILMS [J].