Ultrasmall MOSFETs: The importance of the full coulomb interaction on device characteristics

被引:49
作者
Gross, WJ [1 ]
Vasileska, D
Ferry, DK
机构
[1] Intel Corp, Chandler, AZ 85226 USA
[2] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
基金
美国国家科学基金会;
关键词
electron-electron interactions; threshold voltage fluctuations; ultrasmall MOSFETs;
D O I
10.1109/16.870556
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel scheme that accounts for the short-range Coulomb forces and prevents the double-counting of the long-range interaction is described in the context of three-dimensional (3-D) ensemble Monte Carlo particle-based simulations. It is shown that the inclusion of full Coulomb interactions strongly affects both the threshold voltage, the carrier dynamics and the resulting device characteristics. The proper treatment of the short-range Coulomb forces significantly reduces the distances over which thermalization of the carriers occurs in the drain region and leads to about a factor of two smaller on-state drain currents. The proposed scheme was successfully used to describe fluctuations in various device parameters due to the random dopant fluctuations. Correlation of device threshold voltage to the number of dopant atoms at a given depth showed that most dopant atoms have an impact on the threshold voltage, while only those in the top 8-10 nm affect the device velocity.
引用
收藏
页码:1831 / 1837
页数:7
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