ZnO and ZnMgO growth on a-plane sapphire by molecular beam epitaxy

被引：89

作者：

Ogata, K ^{[1
]}

Koike, K

Tanite, T

Komuro, T

Yan, F

Sasa, S

Inoue, M

Yano, M

机构：

[1] Osaka Inst Technol, Bio Venture Ct5r, Asahi Ku, Osaka 5358585, Japan

[2] Osaka Inst Technol, New Mat Res Ctr, Osaka 5358585, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期

关键词：

photoluminescence; reflection high energy electron diffraction; molecular beam epitaxy; oxides; semiconducting II-VI materials; biosensor;

D O I：

10.1016/S0022-0248(02)02277-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Growth of ZnO and ZnMgO layers by molecular beam epitaxy was conducted toward biosensing application. Oxygen polar (-c) ZnO layers were grown with oxygen termination, while irradiation of Zn beam made the Zn-terminated surface. Luminescent energy of ZnMgO shifted as high as 3.65 eV by increasing Mg composition. Electron carrier densities and mobilities of ZnO and ZnMgO were around 3 x 10(17) cm(-3) and 100 cm(2)/V s, respectively. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：623 / 627

页数：5

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