Room temperature GaInAsSb/GaSb quantum well laser for tunable diode laser absorption spectroscopy around 2.35 μm

被引:16
作者
Vicet, A
Nicolas, JC
Genty, F
Rouillard, Y
Skouri, EM
Baranov, AN
Alibert, C
机构
[1] Univ Montpellier 2, MEN, Ctr Electron & Microoptoelectron Montpellier, CNRS,UMR 5507, F-34095 Montpellier 5, France
[2] Univ Ibnou Zohr, Fac Sci, Agadir, Morocco
来源
IEE PROCEEDINGS-OPTOELECTRONICS | 2000年 / 147卷 / 03期
关键词
D O I
10.1049/ip-opt:20000298
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Novel GaInAsSb/GaSb multiple quantum well lasers grown by molecular beam epitaxy have successfully operated in continous wave around 2.35 mu m at room temperature. The temperature and current tuning properties have been characterised by tunable diode laser absorption spectroscopy. These optical properties allowed a wide spectral scan from 2.27 mu m to 7.36 mu m. Experiments of gas absorption have been carried out in direct absorption measurements in continuous wave regime. From the point of view of trace gas analysis, wavelength modulation has been successfully performed at 19 degrees C around 2.36 mu m. An external cavity has then been added to the setup to obtain monomodal emission. These appealing results are very attractive for portable low-cost and room temperature trace pollutants analysis.
引用
收藏
页码:172 / 176
页数:5
相关论文
共 16 条
[1]  
[Anonymous], AIR MONITORING SPECT
[2]   ANALYTICAL LINE SHAPES FOR LORENTZIAN SIGNALS BROADENED BY MODULATION [J].
ARNDT, R .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (08) :2522-&
[3]  
Avetisov V. G., 1990, Soviet Technical Physics Letters, V16, P549
[4]   Low-threshold laser diodes based on type-II GaInAsSb/GaSb quantum-wells operating at 2.36 mu m at room temperature [J].
Baranov, AN ;
Cuminal, Y ;
Boissier, G ;
Alibert, C ;
Joullie, A .
ELECTRONICS LETTERS, 1996, 32 (24) :2279-2280
[5]   Electroluminescence of GaInSb/GaSb strained single quantum well structures grown by molecular beam epitaxy [J].
Baranov, AN ;
Cuminal, Y ;
Boissier, G ;
Nicolas, JC ;
Lazzari, JL ;
Alibert, C ;
Joullie, A .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (08) :1185-1188
[6]   FREQUENCY-MODULATION AND WAVELENGTH MODULATION SPECTROSCOPIES - COMPARISON OF EXPERIMENTAL METHODS USING A LEAD-SALT DIODE-LASER [J].
BOMSE, DS ;
STANTON, AC ;
SILVER, JA .
APPLIED OPTICS, 1992, 31 (06) :718-731
[7]   DETECTION OF OXYGEN USING SHORT EXTERNAL CAVITY GAAS SEMICONDUCTOR DIODE-LASERS [J].
BRUCE, DM ;
CASSIDY, DT .
APPLIED OPTICS, 1990, 29 (09) :1327-1332
[8]   METHANE EMISSIONS FROM A LANDFILL MEASURED BY EDDY-CORRELATION USING A FAST-RESPONSE DIODE-LASER SENSOR [J].
HOVDE, DC ;
STANTON, AC ;
MEYERS, TP ;
MATT, DR .
JOURNAL OF ATMOSPHERIC CHEMISTRY, 1995, 20 (02) :141-162
[9]   Evaluation of distributed Bragg reflector lasers for high-sensitivity near-infrared gas analysis [J].
Larson, AP ;
Sandstrom, L ;
Hojer, S ;
Ahlberg, H ;
Broberg, B .
OPTICAL ENGINEERING, 1997, 36 (01) :117-123
[10]   ASTIGMATIC MIRROR MULTIPASS ABSORPTION CELLS FOR LONG-PATH-LENGTH SPECTROSCOPY [J].
MCMANUS, JB ;
KEBABIAN, PL ;
ZAHNISER, WS .
APPLIED OPTICS, 1995, 34 (18) :3336-3348