Suppression of Auger deexcitation and temperature quenching of the Er-related 1.54 μm emission with an ultrathin oxide interlayer in an Er/SiO2/Si structure

被引：28

作者：

Kimura, T ^{[1
]}

Isshiki, H ^{[1
]}

Ide, S ^{[1
]}

Shimizu, T ^{[1
]}

Ishida, T ^{[1
]}

Saito, R ^{[1
]}

机构：

[1] Univ Electrocommun, Dept Elect Engn, Tokyo 1828585, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 05期

关键词：

D O I：

10.1063/1.1538320

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A strong enhancement of the Er3+-related 1.54 mum emission. was obtained from Er-doped porous silicon (PSi), when host PSi was slightly oxidized before Er incorporation. Separate measurements of the energy transfer and the Auger. deexcitation between carriers in Si crystallites of preoxidized PSi and Er3+ ions were measured as functions of the preoxidized time or the thickness of the SiO2 interlayer, and revealed that a 1 nm order thick SiO2 interlayer between Si crystallites and Er3+ ions suppressed the Auger energy backflow strongly with only a moderate decrease of the carrier mediated Er3+ excitation. A thin SiO2 interlayer was also effective at suppressing the phonon-assisted energy backtransfer at high temperatures, leading to a strong room temperature Er3+-related 1.54 mum emission. (C) 2003 American Institute of Physics.

引用

页码：2595 / 2601

页数：7

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