Morphological stability and compositional uniformity of alloy thin films

被引:62
作者
Guyer, JE [1 ]
Voorhees, PW [1 ]
机构
[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
基金
美国国家科学基金会;
关键词
misfit; dislocation-free; elastic strain; linear stability;
D O I
10.1016/S0022-0248(97)00845-2
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Alloy thin films differ from pure materials in two respects: the alloy components may be prone to phase separation and the lattice parameter of the film is generally a function of the alloy composition. Both of these characteristics affect the compositional uniformity of the film which has implications for the film's mechanical and opto-electronic properties. To explore these phenomena, we present a linear stability analysis of alloy film growth, which accounts for the stresses generated by both film-substrate misfit and compositional nonuniformities. We find that, when compositional stresses are considered an instability can be present and that this instability is generic to alloy crystal growth. This instability is due to the deposition process, along with compositionally generated stresses, and occurs even in the absence of a film-substrate misfit. We compare our predictions to other-related models and to the experimental literature. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:150 / 165
页数:16
相关论文
共 57 条
[1]  
[Anonymous], 1972, PROG SOLID STATE CHE
[2]   INTERFACE MORPHOLOGY DEVELOPMENT DURING STRESS-CORROSION CRACKING .1. VIA SURFACE DIFFUSION [J].
ASARO, RJ ;
TILLER, WA .
METALLURGICAL TRANSACTIONS, 1972, 3 (07) :1789-&
[3]   ON SPINODAL DECOMPOSITION [J].
CAHN, JW .
ACTA METALLURGICA, 1961, 9 (09) :795-801
[4]   OMVPE GROWTH OF THE METASTABLE-III/V ALLOY GAAS0.5SB0.5 [J].
CHERNG, MJ ;
CHERNG, YT ;
JEN, HR ;
HARPER, P ;
COHEN, RM ;
STRINGFELLOW, GB .
JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (02) :79-85
[5]   GAXIN1-XAS QUANTUM-WIRE HETEROSTRUCTURES FORMED BY STRAIN-INDUCED LATERAL-LAYER ORDERING [J].
CHOU, ST ;
CHENG, KY ;
CHOU, LJ ;
HSIEH, KC .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (10) :6270-6275
[6]   THE CHARACTERISTICS OF STRAIN-MODULATED SURFACE UNDULATIONS FORMED UPON EPITAXIAL SI1-XGEX ALLOY LAYERS ON SI [J].
CULLIS, AG ;
ROBBINS, DJ ;
PIDDUCK, AJ ;
SMITH, PW .
JOURNAL OF CRYSTAL GROWTH, 1992, 123 (3-4) :333-343
[7]   INSTABILITY CRITERIA IN TERNARY AND QUATERNARY-III-V EPITAXIAL SOLID-SOLUTIONS [J].
DECREMOUX, B .
JOURNAL DE PHYSIQUE, 1982, 43 (NC-5) :19-27
[8]   DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].
EAGLESHAM, DJ ;
CERULLO, M .
PHYSICAL REVIEW LETTERS, 1990, 64 (16) :1943-1946
[9]  
FLORO JA, UNPUB
[10]   INSTABILITY OF A BIAXIALLY STRESSED THIN-FILM ON A SUBSTRATE DUE TO MATERIAL DIFFUSION OVER ITS FREE-SURFACE [J].
FREUND, LB ;
JONSDOTTIR, F .
JOURNAL OF THE MECHANICS AND PHYSICS OF SOLIDS, 1993, 41 (07) :1245-1264