Novel post electroplating in-situ rapid annealing process for advanced copper interconnect application

被引：9

作者：

Chen, M ^{[1
]}

Shin, HS ^{[1
]}

Cheung, R ^{[1
]}

Morad, R ^{[1
]}

Dordi, Y ^{[1
]}

Rengarajan, S ^{[1
]}

Tsai, S ^{[1
]}

机构：

[1] Appl Mat Inc, Electra Copper Program, Metal Deposit Prod Business Grp, Santa Clara, CA 95054 USA

来源：

PROCEEDINGS OF THE IEEE 2000 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2000年

关键词：

D O I：

10.1109/IITC.2000.854323

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The room-temperature self-annealing behavior of electroplated (ECP) copper and its impact on device manufacturing has led to the investigation of a post ECP anneal process to stabilize copper film properties before CMP. A novel in-situ anneal chamber was developed to allow for rapid thermal annealing and cooling of ECP wafers on Applied Materials' Electra(TM) Cu Integrated ECP System. This paper reports a detailed study of this process, including the impact of anneal temperature, time, and ambient on film sheet resistance, reflectivity, microstructure, hardness, as well as CMP polishing rate. Process repeatability results from an extended reliability test of the anneal chamber integrated with the Electra(TM) Cu ECP System are also presented.

引用

页码：194 / 196

页数：3

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