Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS2

被引：296

作者：

Kim, In Soo ^{[1
]}

Sangwan, Vinod K. ^{[1
]}

Jariwala, Deep ^{[1
]}

Wood, Joshua D. ^{[1
]}

Park, Spencer ^{[1
]}

Chen, Kan-Sheng ^{[1
]}

Shi, Fengyuan ^{[1
]}

Ruiz-Zepeda, Francisco ^{[5
]}

Ponce, Arturo ^{[5
]}

Jose-Yacaman, Miguel ^{[5
]}

Dravid, Vinayak P. ^{[1
,4
]}

Marks, Tobin J. ^{[1
,2
]}

Hersam, Mark C. ^{[1
,2
,3
]}

Lauhon, Lincoln J. ^{[1
]}

机构：

[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

[2] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

[3] Northwestern Univ, Dept Med, Evanston, IL 60208 USA

[4] Northwestern Univ, Int Inst Nanotechnol, Evanston, IL 60208 USA

[5] Univ Texas San Antonio, Dept Phys & Astron, San Antonio, TX 78249 USA

来源：

ACS NANO | 2014年 / 8卷 / 10期

基金：

美国国家科学基金会; 美国国家卫生研究院;

关键词：

transition metal dichalcogenides; molybdenum disulfide; chemical vapor deposition; stoichiometry; photoluminescence; field-effect mobility; X-ray photoelectron spectroscopy; LARGE-AREA; TRANSPORT-PROPERTIES; MONOLAYER; GROWTH; TRANSITION; LAYERS; MOBILITY; FILMS;

D O I：

10.1021/nn503988x

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Ultrathin transition metal dichalcogenides (TMDCs) of Mo and W show great potential for digital electronics and optoelectronic applications. Whereas early studies were limited to mechanically exfoliated flakes, the large-area synthesis of 2D TMDCs has now been realized by chemical vapor deposition (CVD) based on a sulfurization reaction. The optoelectronic properties of CVD grown monolayer MoS2 have been intensively investigated, but the influence of stoichiometry on the electrical and optical properties has been largely overlooked. Here we systematically vary the stoichiometry of monolayer MoS2 during CVD via controlled sulfurization and investigate the associated changes in photoluminescence and electrical properties. X-ray photoelectron spectroscopy is employed to measure relative variations in stoichiometry and the persistence of MoOx species. As MoS2-d is reduced (increasing d), the field-effect mobility of monolayer transistors increases while the photoluminescence yield becomes nonuniform. Devices fabricated from monolayers with the lowest sulfur content have negligible hysteresis and a threshold voltage of similar to 0 V. We conclude that the electrical and optical properties of monolayer MoS2 crystals can be tuned via stoichiometry engineering to meet the requirements of various applications.

引用

页码：10551 / 10558

页数：8

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