Semiconductor wafer bonding via liquid capillarity

被引：184

作者：

Liau, ZL ^{[1
]}

机构：

[1] MIT, Lincoln Lab, Lexington, MA 02420 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 05期

关键词：

D O I：

10.1063/1.127074

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Liquid surface tension has been used to pull different semiconductor wafers to very close contact and strong bonding. Bonded wafers, such as GaAs/GaP, were heat treated without pressure application to achieve wafer fusion. The bonding process has been analyzed, and criteria for surface tension, wafer flatness, and elasticity have been derived. (C) 2000 American Institute of Physics. [S0003-6951(00)03031-X].

引用

收藏

页码：651 / 653

页数：3

相关论文

共 15 条

[1] DOUBLE-FUSED 1.52-MU-M VERTICAL-CAVITY LASERS [J].

BABIC, DI ;

DUDLEY, JJ ;

STREUBEL, K ;

MIRIN, RP ;

BOWERS, JE ;

HU, EL .

APPLIED PHYSICS LETTERS, 1995, 66 (09) :1030-1032

[2]

FEYNMAN RP, 1964, FEYNMAN LECT PHYSICS, V2, P9

[3] DIFFUSION-BONDED STACKED GAAS FOR QUASI-PHASE-MATCHED 2ND-HARMONIC GENERATION OF A CARBON-DIOXIDE LASER [J].

GORDON, L ;

WOODS, GL ;

ECKARDT, RC ;

ROUTE, RR ;

FEIGELSON, RS ;

FEJER, MM ;

BYER, RL .

ELECTRONICS LETTERS, 1993, 29 (22) :1942-1944

[4]

GRAY DE, 1972, AM I PHYSICS HDB, P207

[5]

HARRISON WA, 1980, ELECTR STRUCTURE PRO, P196

[6] High gain-bandwidth-product silicon heterointerface photodetector [J].

Hawkins, AR ;

Wu, WS ;

Abraham, P ;

Streubel, K ;

Bowers, JE .

APPLIED PHYSICS LETTERS, 1997, 70 (03) :303-305

[7] VERY HIGH-EFFICIENCY SEMICONDUCTOR WAFER-BONDED TRANSPARENT-SUBSTRATE (ALXGA1-X)0.5IN0.5P/GAP LIGHT-EMITTING-DIODES [J].

KISH, FA ;

STERANKA, FM ;

DEFEVERE, DC ;

VANDERWATER, DA ;

PARK, KG ;

KUO, CP ;

OSENTOWSKI, TD ;

PEANASKY, MJ ;

YU, JG ;

FLETCHER, RM ;

STEIGERWALD, DA ;

CRAFORD, MG ;

ROBBINS, VM .

APPLIED PHYSICS LETTERS, 1994, 64 (21) :2839-2841

[8] BUBBLE-FREE WAFER BONDING OF GAAS AND INP ON SILICON IN A MICROCLEANROOM [J].

LEHMANN, V ;

MITANI, K ;

STENGL, R ;

MII, T ;

GOSELE, U .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2141-L2143

[9] WAFER FUSION - A NOVEL TECHNIQUE FOR OPTOELECTRONIC DEVICE FABRICATION AND MONOLITHIC INTEGRATION [J].

LIAU, ZL ;

MULL, DE .

APPLIED PHYSICS LETTERS, 1990, 56 (08) :737-739

[10]

LIAU ZL, UNPUB