BUBBLE-FREE WAFER BONDING OF GAAS AND INP ON SILICON IN A MICROCLEANROOM

被引：45

作者：

LEHMANN, V

MITANI, K

STENGL, R

MII, T

GOSELE, U

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 12期

关键词：

D O I：

10.1143/JJAP.28.L2141

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L2141 / L2143

页数：3

共 10 条

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[8] BUBBLE-FREE SILICON-WAFER BONDING IN A NON-CLEANROOM ENVIRONMENT [J].

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