High-photosensitivity p-channel organic phototransistors based on a biphenyl end-capped fused bithiophene oligomer -: art. no. 043501

被引:159
作者
Noh, YY
Kim, DY
Yoshida, Y
Yase, K
Jung, BJ
Lim, E
Shim, HK
机构
[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Ctr Frontier Mat, Kwangju 500712, South Korea
[2] Natl Inst Adv Ind Sci & Technol, Photon Res Inst, Tsukuba, Ibaraki 3058565, Japan
[3] Korea Adv Inst Sci & Technol, Ctr Adv Funct Polymers, Dept Chem, Taejon 305701, South Korea
[4] Korea Adv Inst Sci & Technol, Sch Mol Sci BK21, Taejon 305701, South Korea
关键词
D O I
10.1063/1.1856144
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report highly photosensitive organic phototransistors (OPTs) based on a 2,5-bis-biphenyl-4-yl-thieno[3,2-b]thiophene (BPTT). The measured maximum sensitivity and the ratio of photocurrent to dark current (I-ph/I-dark) in BPTT OPTs were 82 A/W and 2.0x10(5) under 380 nm UV light with 1.55 mW/cm(2), respectively. The prepared OPTs show a photocurrent response similar to the absorption spectrum of BPTT. The major mechanisms for photocurrent amplification in this device were verified from experimental results as photovoltaic (turn-on) and photocurrent effect (turn-off) by a fitting to theoretic equations. (C) 2005 American Institute of Physics.
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页码:043501 / 1
页数:3
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