Large area GaN Schottky photodiode with low leakage current

被引：4

作者：

Aslam, S

Vest, RE

Franz, D

Yan, F

Zhao, Y

机构：

[1] Raytheon ITSS, Lanham, MD 20706 USA

[2] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA

[3] Keithley Instruments Inc, Cleveland, OH 44139 USA

来源：

ELECTRONICS LETTERS | 2004年 / 40卷 / 17期

关键词：

D O I：

10.1049/el:20045563

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pt/n-type GaN Schottky photodiodes with large active areas which exhibit low leakage currents are fabricated. Reverse bias leakage currents of 2.7 nA for a 1 cm(2) diode and 14 pA for a 0.25 cm(2) diode both at -0.5 V bias are reported. External quantum efficiency measurements between the spectral range 50 to 500 nm gave a peak responsivity of 77.5 mA/W at 320 nm for a 0.25 cm(2) diode, corresponding to a spectral detectivity, D* = 1.5 x 10(14) cmHz(1/2)W(-1).

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收藏

页码：1080 / 1082

页数：3

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