Edge dislocations may cause growth spirals

被引:13
作者
Strunk, HP
机构
关键词
D O I
10.1016/0022-0248(95)00925-6
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
A detailed geometrical analysis illustrates that a growth spiral cannot be used to characterize the dislocation creating it.
引用
收藏
页码:184 / 185
页数:2
相关论文
共 5 条
[1]   ANALYSIS OF DISLOCATIONS CREATING MONO-MOLECULAR GROWTH STEPS [J].
BAUSER, E ;
STRUNK, H .
JOURNAL OF CRYSTAL GROWTH, 1981, 51 (02) :362-366
[2]   MICROSCOPIC GROWTH MECHANISMS OF SEMICONDUCTORS - EXPERIMENTS AND MODELS [J].
BAUSER, E ;
STRUNK, HP .
JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) :561-580
[3]   THE INFLUENCE OF DISLOCATIONS ON CRYSTAL GROWTH [J].
FRANK, FC .
DISCUSSIONS OF THE FARADAY SOCIETY, 1949, (05) :48-54
[4]   EDGE DISLOCATIONS AS CRYSTAL-GROWTH SOURCES [J].
FRANK, FC .
JOURNAL OF CRYSTAL GROWTH, 1981, 51 (02) :367-368
[5]   GROWTH-PROMOTING DISSOCIATED DISLOCATIONS IN SOLUTION-GROWN SILICON [J].
KASS, D ;
STRUNK, H .
THIN SOLID FILMS, 1981, 81 (03) :L101-L104