Residue-free room temperature UV-nanoimprinting of submicron organic thin film transistors

被引：45

作者：

Auner, C. ^{[1
]}

Palfinger, U. ^{[1
]}

Gold, H. ^{[1
]}

Kraxner, J. ^{[1
]}

Haase, A. ^{[1
]}

Haber, T. ^{[2
]}

Sezen, M. ^{[2
]}

Grogger, W. ^{[2
]}

Jakopic, G. ^{[1
]}

Krenn, J. R. ^{[1
]}

Leising, G. ^{[3
]}

Stadlober, B. ^{[1
]}

机构：

[1] Joanneum Res GmbH, Inst Nanostructured Mat & Photon, A-8160 Weiz, Austria

[2] Graz Univ Technol, Inst Electron Microscopy, A-8010 Graz, Austria

[3] Graz Univ Technol, Inst Solid State Phys, A-8010 Graz, Austria

来源：

ORGANIC ELECTRONICS | 2009年 / 10卷 / 08期

关键词：

Organic transistors; Thin films; UV-nanoimprinting; Miniaturization; Submicron; Imprint resist; LITHOGRAPHY; FABRICATION; DIELECTRICS;

D O I：

10.1016/j.orgel.2009.08.010

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study we report on an innovative nanoimprint process for the fabrication of entirely patterned submicron OTFTs in a bottom-gate configuration. The method is based on UV-Nanoimprint Lithography (UV-NIL) combined with a novel imprint resist whose outstanding chemical and physical properties are responsible for the excellent results in structure transfer. In combination with a pretreated stamp the UV-curable resist enables residue-free imprinting thus making etching obsolete. A subsequent lift-off can be done with water. The UV-NIL process implies no extra temperature budget, is time saving due to short curing times, eco-friendly due to a water-based lift-off, simple because it is etch-free and completely r2r compatible. It works perfectly even if ultra-thin organic and hybrid films are used as gate dielectrics. On this basis entirely patterned functional submicron OTFTs with pentacene as the semiconductor are fabricated showing clear saturation, low switch-on voltage (similar to 3 V) and a sufficiently high on-off ratio (10(3)). (C) 2009 Published by Elsevier B.V.

引用

页码：1466 / 1472

页数：7

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