Oxygen vacancies in high dielectric constant oxide-semiconductor films

被引：189

作者：

Guha, Supratik ^{[1
]}

Narayanan, Vijay ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

PHYSICAL REVIEW LETTERS | 2007年 / 98卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.98.196101

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We provide evidence that the oxygen vacancy is a dominant intrinsic electronic defect in nanometer scaled hafnium oxide dielectric films on silicon, relevant to microelectronics technology. We demonstrate this by developing a general model for the kinetics of oxygen vacancy formation in metal-ultrathin oxide-semiconductor heterostructures, calculating its effect upon the band bending and interfacial oxidation rates and showing good experimental agreement with the predictions.

引用

页数：4

共 19 条

[1] Oxygen exchange and transport in thin zirconia films on Si(100)
Busch, BW
Schulte, WH
Garfunkel, E
Gustafsson, T
Qi, W
Nieh, R
Lee, J
[J]. PHYSICAL REVIEW B, 2000, 62 (20) : R13290 - R13293
[2] CALLEGARI AC, UNPUB
[3] Cartier E, 2005, 2005 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, P230
[4] CHANG YA, 1988, PROG MATER SCI, V32, P97, DOI 10.1016/0079-6425(88)90001-1
[5] ON THE DEFECT STRUCTURE OF ZRO2 AND HFO2
KOFSTAD, P
RUZICKA, DJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (03) : 181 - 184
[6] Oxygen defects and Fermi level location in metal-hafnium oxide-silicon structures
Lim, D
Haight, R
Copel, M
Cartier, E
[J]. APPLIED PHYSICS LETTERS, 2005, 87 (07)
[7] MULLER RS, 1986, DEVICE ELECT INTEGRA, P399
[8] Interfacial oxide formation and oxygen diffusion in rare earth oxide-silicon epitaxial heterostructures
Narayanan, V
Guha, S
Copel, M
Bojarczuk, NA
Flaitz, PL
Gribelyuk, M
[J]. APPLIED PHYSICS LETTERS, 2002, 81 (22) : 4183 - 4185
[9] Ruthenium gate electrodes on SiO2 and HfO2:: Sensitivity to hydrogen and oxygen ambients
Pantisano, L.
Schram, T.
Li, Z.
Lisoni, J. G.
Pourtois, G.
De Gendt, S.
Brunco, D. P.
Akheyar, A.
Afanas'ev, V. V.
Shamuilia, S.
Stesmans, A.
[J]. APPLIED PHYSICS LETTERS, 2006, 88 (24)
[10] PARUCHURI VK, IN PRESS APPL PHYS L

← 1 2 →