Controlled n-type doping of antimonides and arsenides using GaTe

被引：14

作者：

Bennett, BR ^{[1
]}

Magno, R ^{[1
]}

Papanicolaou, N ^{[1
]}

机构：

[1] USN, Res Lab, Div Elect Sci & Technol, Washington, DC 20375 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期

关键词：

doping; molecular beam epitaxy; antimonides; semiconducting III-V materials; semiconducting quaternary alloys; semiconducting gallium compounds;

D O I：

10.1016/S0022-0248(02)02186-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaTe was used as a dopant source in molecular beam epitaxy to grow n-type AlSb, GaSb, InAs, and GaAs. Carrier density was independent of host material and growth temperature between 350degreesC and 550degreesC. Calibrations based upon the binary results were applied to alloys of InAlAsSb for high-frequency transistor applications. Controlled doping of these alloys was achieved at growth temperatures of 350degreesC and 400degreesC. Growth of a nominally undoped GaAs layer immediately after use of the GaTe cell indicated no significant memory effects. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：532 / 537

页数：6

共 18 条

[1]

[Anonymous], COMMUNICATION

[2] Modulation doping of InAs/AlSb quantum wells using remote InAs donor layers [J].

Bennett, BR ;

Yang, MJ ;

Shanabrook, BV ;

Boos, JB ;

Park, D .

APPLIED PHYSICS LETTERS, 1998, 72 (10) :1193-1195

[3] IMPROVED CHARGE CONTROL AND FREQUENCY PERFORMANCE IN INAS/ALSB-BASED HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS [J].

BOLOGNESI, CR ;

CAINE, EJ ;

KROEMER, H .

IEEE ELECTRON DEVICE LETTERS, 1994, 15 (01) :16-18

[4] AlSb/InAs HEMT's for low-voltage, high-speed applications [J].

Boos, JB ;

Kruppa, W ;

Bennett, BR ;

Park, D ;

Kirchoefer, SW ;

Bass, R ;

Dietrich, HB .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (09) :1869-1875

[5] 0.1μm AlSb/InAs HEMTs with InAs subchannel [J].

Boos, JB ;

Yang, MJ ;

Bennett, BR ;

Park, D ;

Kruppa, W ;

Yang, CH ;

Bass, R .

ELECTRONICS LETTERS, 1998, 34 (15) :1525-1526

[6] HETEROJUNCTION BIPOLAR-TRANSISTOR UTILIZING ALGASB/GASB ALLOY SYSTEM [J].

FURUKAWA, A ;

MIZUTA, M .

ELECTRONICS LETTERS, 1988, 24 (22) :1378-1380

[7] Metallization options and annealing temperatures for low contact resistance ohmic contacts to n-type GaSb [J].

Ikossi, K ;

Goldenberg, M ;

Mittereder, J .

SOLID-STATE ELECTRONICS, 2002, 46 (10) :1627-1631

[8] MBE growth of Si-doped InAlAsSb layers lattice-matched with InAs [J].

Kudo, M ;

Mishima, T .

JOURNAL OF CRYSTAL GROWTH, 1997, 175 :844-848

[9] n-channel AlSb/GaSb modulation-doped field-effect transistors [J].

Li, X ;

Du, Q ;

Heroux, JB ;

Wang, WI .

SOLID-STATE ELECTRONICS, 1997, 41 (12) :1853-1856

[10]

MAGNO R, P 2002 EASTM C IEEE, P288

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