HETEROJUNCTION BIPOLAR-TRANSISTOR UTILIZING ALGASB/GASB ALLOY SYSTEM

被引：28

作者：

FURUKAWA, A

MIZUTA, M

机构：

[1] NEC, Japan

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 22期

关键词：

D O I：

10.1049/el:19880943

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1378 / 1380

页数：3

共 7 条

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