X-ray scattering, dislocations and orthorhombic GaSb

被引：18

作者：

Babkevich, AY

Cowley, RA

Mason, NJ

Stunault, A

机构：

[1] Univ Oxford, Clarendon Lab, Oxford OX1 3PU, England

[2] European Synchrotron Radiat Facil, XMaS, F-38043 Grenoble, France

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2000年 / 12卷 / 22期

关键词：

D O I：

10.1088/0953-8984/12/22/307

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The structure of two GaSb layers, 13 nm and 327 nm thick, grown by metal-organic vapour-phase epitaxy on a GaAs(001) substrate have been studied by means of high-resolution x-ray diffraction. The large lattice mismatch is largely relaxed by regular arrays of 90 degrees dislocations. The results show that both layers have orthorhombic crystal structure, and provide detailed quantitative information about the distortions caused by the dislocations in both the GaSb layers and the GaAs substrate.

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页码：4747 / 4756

页数：10

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