Conductivity and the Hall coefficient of nanostructured titanium nitride films

被引：30

作者：

Andrievski, RA ^{[1
]}

Dashevsky, ZM

Kalinnikov, GV

机构：

[1] Russian Acad Sci, Inst Chem Phys, Chernogolovka 142432, Moscow Oblast, Russia

[2] Ben Gurion Univ Negev, IL-84105 Beer Sheva, Israel

来源：

TECHNICAL PHYSICS LETTERS | 2004年 / 30卷 / 11期

关键词：

D O I：

10.1134/1.1829346

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The conductivity and the Hall coefficient of nanostructured TiN films synthesized by nonreactive RF magnetron sputtering have been experimentally studied. The mechanism of conductivity and the role of grain size are discussed. (C) 2004 MAIK "Nauka/Interperiodica".

引用

页码：930 / 932

页数：3

共 11 条

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