Etching of SiO2 and Si in fluorocarbon plasmas:: A detailed surface model accounting for etching and deposition

A surface model is presented for the etching of silicon (Si) and silicon dioxide (SiO2) in fluorocarbon plasmas. Etching and deposition are accounted for using a generalized concept for the "polymer surface coverage," which is found to be equivalent to a normalized fluorocarbon film thickness covering the etched surfaces. The model coefficients are obtained from fits to available beam experimental data, while the model results are successfully compared with high-density plasma etching data. (C) 2000 American Institute of Physics. [S0021-8979(00)02521-4].