Atomic layer epitaxy

被引：69

作者：

Niinisto, L ^{[1
]}

机构：

[1] Helsinki Univ Technol, Inorgan & Analyt Chem Lab, FIN-02015 Espoo, Finland

来源：

CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE | 1998年 / 3卷 / 02期

关键词：

D O I：

10.1016/S1359-0286(98)80080-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Atomic layer epitaxy is now a mature technique offering, through its self-limiting character, distinct advantages for materials processing especially when precise layer thickness control or conformal coating is needed. The technique is well suited for binary compounds and their doping but it is also applicable to more complex thin film structures. With a broadening range of materials processed by atomic layer epitaxy, new applications are emerging in electronics, optics and catalysis.

引用

页码：147 / 152

页数：6

共 63 条

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