Oxygen sensing characteristics of individual ZnO nanowire transistors

被引：336

作者：

Li, QH ^{[1
]}

Liang, YX ^{[1
]}

Wan, Q ^{[1
]}

Wang, TH ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 26期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.1840116

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Individual ZnO nanowire transistors are fabricated, and their sensing properties are investigated. The transistors show a carrier density of 2300 mum(-1) and mobility up to 6.4 cm(2)/V s, which are obtained from the I-SD-V-G curves. The threshold voltage shifts in the positive direction and the source-drain current decreases as ambient oxygen concentration increases. However, the opposite occurs when the transistors are under illumination. Surface adsorbates on the ZnO nanowires affect both the mobility and the carrier density. Our data are helpful in understanding the sensing mechanism of the gas sensors. (C) 2004 American Institute of Physics.

引用

页码：6389 / 6391

页数：3

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