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Trap creation in ultrathin SiO2 films due to electron injection studied by scanning tunneling microscopy/scanning tunneling spectroscopy

被引：9
作者：
Ohmori, K
Zaima, S
Yasuda, Y
机构：
[1] Nagoya Univ, Grad Sch Engn, Dept Crystalline Mat Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan
[2] Nagoya Univ, Grad Sch Engn, Ctr Cooperat Res Adv Sci & Technol, Chikusa Ku, Nagoya, Aichi 4648603, Japan
来源：
APPLIED SURFACE SCIENCE | 2000年 / 162卷
基金：
日本学术振兴会;
关键词：
trap creation; silicon oxide; local electronic states; scanning tunneling microscopy; scanning tunneling spectroscopy;
D O I：
10.1016/S0169-4332(00)00222-1
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) have been employed for the investigation of trap creation in ultrathin SiO2 films on an atomic scale. Bright spots created by electron injection using STM tips were observed in STM images. The density of bright spots depends on the injection voltage and temperature. Comparing STS spectra obtained from electron-injected SiO2 films with those from a fresh film, we have found that the bright spots are related to positively charged traps in the SiO2 films and caused a band bending near the Si/SiO2 interface. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：395 / 400
页数：6
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