Low resistance and high reflectance Pt/Rh contacts to p-type GaN for GaN-based flip chip light-emitting diodes

被引：38

作者：

Lee, JR ^{[1
]}

Na, SI

Jeong, JH

Lee, SN

Jang, JS

Lee, SH

Jung, JJ

Song, JO

Seong, TY

Park, SJ

机构：

[1] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[2] LG Innotek, Opt Device Dev Grp, Kwangju 506731, South Korea

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2005年 / 152卷 / 01期

关键词：

D O I：

10.1149/1.1825382

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We report on a Pt(8 nm)/Rh(200 nm) metallization scheme for use in low resistance and high reflectance ohmic contacts to p-GaN for use in flip chip light-emitting diodes (FCLED) applications. The thermal annealing of a Pt/Rh contact at 500 degreesC led to linear current-voltage characteristics with a specific contact resistance of 9.0 x 10(-5) Omega cm(2) while the as-deposited Pt/Rh contact showed nonohmic characteristics. It was also shown that the 500 degreesC annealed contact produces a high reflectance of 62% at a wavelength of 460 nm. Auger electron spectroscopy depth profiles and glancing-angle X-ray diffraction results indicated that the low contact resistance of the annealed sample can be attributed to the formation of Ga-Pt and Ga-Rh intermetallic phases. Furthermore, the electrical performance of an FCLED with the Pt/Rh reflector scheme was superior to that of a FCLED with a Ni/Au/Ag reflector scheme. (C) 2004 The Electrochemical Society.

引用

页码：G92 / G94

页数：3

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