Atomic-scale mapping of local lattice distortions in highly strained coherent islands of InxGa1-xAs/GaAs by high-resolution electron microscopy and image processing

被引：28

作者：

Kret, S ^{[1
]}

Delamarre, C ^{[1
]}

Laval, JY ^{[1
]}

Dubon, A ^{[1
]}

机构：

[1] Ecole Super Phys & Chim Ind, CNRS, UPR 05, Lab Phys Solide, F-75231 Paris 05, France

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1998年 / 77卷 / 05期

关键词：

D O I：

10.1080/095008398178381

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

During the epitaxy of highly strained InxGa1-xAs (x > 0.25) on {100}-oriented GaAs, a two-dimensional (2D)-three-dimensional transition of the growth mode was observed with formation of coherent islands. Deformations at the atomic scale were measured by image processing of high-resolution electron microscopy {110} projections. Quantitative experimental 2D contour maps of epsilon(x) and epsilon(z) deformations perpendicular and parallel respectively to the growth direction of the heterostructure, are presented. Experimental values are compared with theoretical calculations according to a model of homogeneous solid in biaxial compression. Indium segregation in both x and z directions was tentatively inferred.

引用

页码：249 / 256

页数：8

共 27 条

[1] ELASTIC MISFIT STRESS-RELAXATION IN HIGHLY STRAINED INGAAS/GAAS STRUCTURES [J].

ANDROUSSI, Y ;

LEFEBVRE, A ;

COURBOULES, B ;

GRANDJEAN, N ;

MASSIES, J ;

BOUHACINA, T ;

AIME, JP .

APPLIED PHYSICS LETTERS, 1994, 65 (09) :1162-1164

[2] Dislocation introduction in the initial stages of MBE growth of highly strained In0.30Ga0.70As/GaAs structures [J].

Androussi, Y ;

Lefebvre, A ;

Benabbas, T ;

Francois, P ;

Delamarre, C ;

Laval, JY ;

Dubon, A .

JOURNAL OF CRYSTAL GROWTH, 1996, 169 (02) :209-216

[3] DIRECT MEASUREMENT OF LOCAL LATTICE-DISTORTIONS IN STRAINED LAYER STRUCTURES BY HREM [J].

BIERWOLF, R ;

HOHENSTEIN, M ;

PHILLIPP, F ;

BRANDT, O ;

CROOK, GE ;

PLOOG, K .

ULTRAMICROSCOPY, 1993, 49 (1-4) :273-285

[4] 2D-3D transition in highly strained GaAs/Ga1-xInxAs heterostructures by transmission electron microscopy [J].

Delamarre, C ;

Laval, JY ;

Wang, LP ;

Dubon, A ;

Schiffmacher, G .

JOURNAL OF CRYSTAL GROWTH, 1997, 177 (1-2) :6-16

[5] THE FOURIER-SERIES METHOD FOR THE CALCULATION OF STRAIN RELAXATION IN STRAINED-LAYER STRUCTURES [J].

FAUX, DA .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (01) :186-192

[6]

GAO H, 1993, J MECH PHYS SOLIDS, V39, P2983

[7] MONOLAYER SCALE STUDY OF SEGREGATION EFFECTS IN INAS/GAAS HETEROSTRUCTURES [J].

GERARD, JM ;

DANTERROCHES, C ;

MARZIN, JY .

JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) :536-540

[8] THE EFFECT OF ELASTIC RELAXATION ON THE LOCAL-STRUCTURE OF LATTICE-MODULATED THIN-FILMS [J].

GIBSON, JM ;

TREACY, MMJ .

ULTRAMICROSCOPY, 1984, 14 (04) :345-349

[9] ELASTIC STATE AND THERMODYNAMICAL PROPERTIES OF INHOMOGENEOUS EPITAXIAL LAYERS - APPLICATION TO IMMISCIBLE III-V-ALLOYS [J].

GLAS, F .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) :3201-3208

[10] Thermodynamics of a stressed alloy with a free surface: Coupling between the morphological and compositional instabilities [J].

Glas, F .

PHYSICAL REVIEW B, 1997, 55 (17) :11277-11286

← 1 2 3 →