ELASTIC MISFIT STRESS-RELAXATION IN HIGHLY STRAINED INGAAS/GAAS STRUCTURES

被引：40

作者：

ANDROUSSI, Y

LEFEBVRE, A

COURBOULES, B

GRANDJEAN, N

MASSIES, J

BOUHACINA, T

AIME, JP

机构：

[1] LAB PHYS SOLIDE & ENERGIE SOLAIRE,CNRS,F-06560 VALBONNE,FRANCE

[2] UNIV BORDEAUX 1,CRISTALLOG & PHYS CRISTALLINE LAB,F-33405 TALENCE,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 09期

关键词：

D O I：

10.1063/1.112128

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The strain contrasts associated with three-dimensional coherently strained islands formed during the epitaxial growth of highly strained In0.45Ga0.55As layers on GaAs (001) have been studied by transmission electron-microscopy. It is demonstrated that the comparison of these experimental strain contrasts with simulated profiles makes it possible to assess the elastic relaxation of the islands.

引用

页码：1162 / 1164

页数：3

共 29 条

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