Characterizing the remote plasma polymerization of octafluorocyclobutane induced by RF-driven hollow-cathode discharge

被引:12
作者
Ningel, KP [1 ]
Theirich, D [1 ]
Engemann, J [1 ]
机构
[1] Berg Univ Gesamthsch Wuppertal, Forschungszentrum Mikrostrukturtech, D-42119 Wuppertal, Germany
关键词
radio frequency plasma; hollow cathode plasma jet; plasma polymerization; hexamethyldisiloxane; octafluorocyclobutane;
D O I
10.1016/S0257-8972(97)00147-3
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Thin films with hydrophobic character are required for many applications, e.g., as diffusion barrier or as corrosion protection. These properties can be realized by plasma polymerization of fluorocarbon monomers such as C4F8 to produce homogeneous layers of PTFE-like structure. Plasma polymerization requires plasma sources with high deposition rates even when processing thermally unstable substrates or those that absorb RF power. Furthermore, excellent film homogeneity is often needed when coating large surface areas. Here we characterize a radio frequency (RF) remote process to deposit such films where discharge and processing zone are separated. As primary discharge we use a novel, linear, hollow-cathode RF plasma source. The feasibility for homogeneous large-area deposition has already been demonstrated for organosilicon compounds (HMDSO). In this paper the remote polymerization of C4F8 is characterized. Geometric effects are discussed as well as the influence of excitation power and gas flows on the process. Deposition rates of 160 nm min(-1) and a homogeneity of +/- 2% over a linear dimension of 250 mm are realized. Contact angles of up to 120 degrees correspond to those on conventional poly(tetrafluoroethylene) (PTFE). The refractive index of the films was determined to 1.375 +/- 0.025. Fourier transform infra-red spectra proved the existence of PTFE-like structures. (C) 1998 Elsevier Science S.A.
引用
收藏
页码:1142 / 1147
页数:6
相关论文
共 20 条
[1]   SUPERHIGH-RATE PLASMA-JET ETCHING OF SILICON [J].
BARDOS, L ;
BERG, S ;
BLOM, HO .
APPLIED PHYSICS LETTERS, 1989, 55 (16) :1615-1617
[2]   HIGH-RATE JET PLASMA-ASSISTED CHEMICAL VAPOR-DEPOSITION [J].
BARDOS, L ;
DUSEK, V .
THIN SOLID FILMS, 1988, 158 (02) :265-270
[3]   DEPOSITION OF CARBONACEOUS FILMS ONTO INTERNAL WALLS OF TUBES [J].
BARDOS, L ;
BARANKOVA, H ;
NYBERG, T ;
BERG, S .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (02) :374-377
[4]   PLASMA-JET DRY ETCHING USING DIFFERENT ELECTRODE CONFIGURATIONS [J].
BARKLUND, AM ;
BLOM, HO ;
BERG, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03) :1055-1057
[5]  
BELL AT, 1980, TOP CURR CHEM, P43
[6]  
Chapman B, 1980, GLOW DISCHARGE PROCE, P139
[7]  
COLTHUP NB, 1964, INTRO INFRARED RAMAN, P314
[8]  
KAY E, 1980, TOP CURR CHEM, P1
[9]   REMOTE AND DIRECT MICROWAVE PLASMA DEPOSITION OF HMDSO FILMS - COMPARATIVE-STUDY [J].
KORZEC, D ;
THEIRICH, D ;
WERNER, F ;
TRAUB, K ;
ENGEMANN, J .
SURFACE & COATINGS TECHNOLOGY, 1995, 74-5 (1-3) :67-74
[10]  
KORZEC D, 1995, P 3 EUR WORKSH LARG