Nanowire and nanobelt arrays of zinc oxide from synthesis to properties and to novel devices

被引：246

作者：

Wang, Xudong ^{[1
]}

Song, Jinhui ^{[1
]}

Wang, Zhong Lin ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2007年 / 17卷 / 08期

关键词：

SINGLE-CRYSTAL NANORINGS; FIELD-EFFECT TRANSISTOR; ALIGNED ZNO NANORODS; PATTERNED GROWTH; BUILDING-BLOCKS; GAN; TECHNOLOGY; DIODES;

D O I：

10.1039/b616963p

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This review focuses on the growth, properties and novel applications of aligned arrays of ZnO nanowires (NWs) and nanobelts (NBs) for nanogenerators and nano-piezotronics. Owing to the semiconducting and piezoelectric dual properties of ZnO crystals, novel applications are introduced using aligned ZnO NWs, such as nanogenerators. These unique properties and applications will have profound impacts in many areas, such as self-powered nanodevices and nanosystems for in situ, real-time and implantable biosensing and biodetection, self-powering for defence and commercial applications, and remote sensing for space technology. The article provides detailed illustrations about the synthesis method, mechanical, electrical and optical properties, as well as the underlying mechanism for piezoelectronic devices and systems.

引用

页码：711 / 720

页数：10

共 39 条

[1] Bulk acoustic resonator based on piezoelectric ZnO belts [J].

Buchine, Brent A. ;

Hughes, William L. ;

Degertekin, F. Levent ;

Wang, Zhong L. .

NANO LETTERS, 2006, 6 (06) :1155-1159

[2] Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices [J].

Duan, XF ;

Huang, Y ;

Cui, Y ;

Wang, JF ;

Lieber, CM .

NATURE, 2001, 409 (6816) :66-69

[3] Patterned growth of aligned ZnO nanowire arrays on sapphire and GaN layers [J].

Fan, HJ ;

Fleischer, F ;

Lee, W ;

Nielsch, K ;

Scholz, R ;

Zacharias, M ;

Gösele, U ;

Dadgar, A ;

Krost, A .

SUPERLATTICES AND MICROSTRUCTURES, 2004, 36 (1-3) :95-105

[4] Semiconductor nanowires: From self-organization to patterned growth [J].

Fan, HJ ;

Werner, P ;

Zacharias, M .

SMALL, 2006, 2 (06) :700-717

[5] ZnO nanowire field-effect transistor and oxygen sensing property [J].

Fan, ZY ;

Wang, DW ;

Chang, PC ;

Tseng, WY ;

Lu, JG .

APPLIED PHYSICS LETTERS, 2004, 85 (24) :5923-5925

[6] High-speed integrated nanowire circuits [J].

Friedman, RS ;

McAlpine, MC ;

Ricketts, DS ;

Ham, D ;

Lieber, CM .

NATURE, 2005, 434 (7037) :1085-1085

[7] Conversion of zinc oxide nanobelts into superlattice-structured nanohelices [J].

Gao, PX ;

Ding, Y ;

Mai, WJ ;

Hughes, WL ;

Lao, CS ;

Wang, ZL .

SCIENCE, 2005, 309 (5741) :1700-1704

[8] Silicon vertically integrated nanowire field effect transistors [J].

Goldberger, Josh ;

Hochbaum, Allon I. ;

Fan, Rong ;

Yang, Peidong .

NANO LETTERS, 2006, 6 (05) :973-977

[9] Rectifying behavior of electrically aligned ZnO nanorods [J].

Harnack, O ;

Pacholski, C ;

Weller, H ;

Yasuda, A ;

Wessels, JM .

NANO LETTERS, 2003, 3 (08) :1097-1101

[10] Room-temperature ultraviolet nanowire nanolasers [J].

Huang, MH ;

Mao, S ;

Feick, H ;

Yan, HQ ;

Wu, YY ;

Kind, H ;

Weber, E ;

Russo, R ;

Yang, PD .

SCIENCE, 2001, 292 (5523) :1897-1899

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