Picosecond photoluminescence studies of carrier escape processes in a GaAs/Al0.3Ga0.7As single quantum well

被引：13

作者：

Thucydides, G ^{[1
]}

Barnes, JM ^{[1
]}

Tsui, E ^{[1
]}

Barnham, KWJ ^{[1
]}

Phillips, CC ^{[1
]}

Cheng, TS ^{[1
]}

Foxon, CT ^{[1
]}

机构：

[1] UNIV NOTTINGHAM, DEPT PHYS, NOTTINGHAM NG7 2RD, ENGLAND

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1996年 / 11卷 / 03期

关键词：

D O I：

10.1088/0268-1242/11/3/010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Time-resolved photoluminescence (TRPL), continuous-wave photoluminescence (PL) and photocurrent (PC) measurements have been performed on a GaAs/Al0.3Ga0.7As single quantum well (SQW) embedded in a p-i-n diode and, by combining these measurements, unambiguous carrier escape times have been extracted as a function of perpendicular applied electric field and temperature. The experimental data are compared with a quantitative model based on the competition between escape and recombination lifetimes which includes direct tunnelling, thermally assisted tunnelling and thermionic emission processes and which has no free fitting parameters. Good agreement was found for the escape times with the radiative recombination rate being determined by the carriers with the faster escape rate and hence the lowest steady-state concentration. These are holes in this sample.

引用

页码：331 / 339

页数：9

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