Characterization and control of II-VI/III-V heterovalent interfaces

被引：25

作者：

Ohtake, A

Miwa, S

Kuo, LH

Yasuda, T

Kimura, K

Jin, CG

Yao, T

机构：

[1] Joint Res Ctr Atom Technol, Tsukuba, Ibaraki 305, Japan

[2] ATP, Tsukuba, Ibaraki 305, Japan

[3] NAIR, Tsukuba, Ibaraki 305, Japan

[4] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 980, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 184卷

关键词：

heterovalent interface; ZnSe; GaAs; epitaxy; defect generation;

D O I：

10.1016/S0022-0248(98)80315-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have systematically studied the structure, chemical composition, and formation processes of ZnSe/GaAs(0 0 1) interfaces where heterovalency plays an important role. Prior to ZnSe growth, the initial surfaces were prepared by exposing differently reconstructed GaAs surfaces to a beam of Zn, Se, or Te. It has been shown that the structure and the composition of this interface can be well controlled by the preparation procedures of initial GaAs surfaces. We have also found that generation of the faulted defects in ZnSe films is closely related with the formation of interface layers. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：163 / 172

页数：10

共 25 条

[1] STRAIN AND DIPOLE EFFECTS IN COVALENT-POLAR SEMICONDUCTOR SUPERLATTICES [J].