Parallel writing on zirconium nitride thin films by local oxidation nanolithography

被引：17

作者：

Farkas, N ^{[1
]}

Comer, JR

Zhang, G

Evans, EA

Ramsier, RD

Wight, S

Dagata, JA

机构：

[1] Univ Akron, Dept Phys, Akron, OH 44325 USA

[2] Univ Akron, Dept Chem & Chem Engn, Akron, OH 44325 USA

[3] Natl Inst Stand & Technol, Surface & Microanal Sci Div, Gaithersburg, MD 20899 USA

[4] Natl Inst Stand & Technol, Div Precis Engn, Gaithersburg, MD 20899 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 23期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1833569

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Parallel pattern transfer of submicrometer-scale oxide features onto zirconium nitride thin films is reported. The oxidation reaction was verified by Auger microprobe analysis and secondary ion mass spectrometry. Oxide features of similar to70 nm in height can be formed and selectively etched in a dilute aqueous hydrogen fluoride solution. This provides an interesting route to potential new applications for high-melting point, biocompatible surfaces that possess small feature sizes with controlled geometries. (C) 2004 American Institute of Physics.

引用

收藏

页码：5691 / 5693

页数：3

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