Surface passivation of GaAs with ultrathin Si3N4/Si interface control layer formed by MBE and in situ ECR plasma nitridation

被引：30

作者：

Hashizume, T ^{[1
]}

Ikeya, K

Mutoh, M

Hasegawa, H

机构：

[1] Hokkaido Univ, Res Ctr Interface Quantum Elect, Sapporo, Hokkaido 060, Japan

[2] Hokkaido Univ, Grad Sch Elect & Informat Engn, Sapporo, Hokkaido 060, Japan

来源：

APPLIED SURFACE SCIENCE | 1998年 / 123卷

关键词：

surface passivation; Si interface control layer; nitridation; ECR; XPS; PL;

D O I：

10.1016/S0169-4332(97)00576-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

GaAs surfaces were successfully passivated by utilizing an ultrathin Si3N4/Si interface control layer (ICL) formed by molecular beam epitaxy (MBE) and in situ electron-cyclotron-resonance (ECR) plasma-assisted nitridation. Detailed X-ray photoelectron spectroscopy (XPS) analysis showed that optimization of the ECR plasma process led to the realization of well-defined Si3N4/Si double-layer structure without change in chemical status of GaAs surface. As compared with the clean MBE surface, surface Fermi level pinning became weaker and the band-edge photoluminescence (PL) intensity became larger after passivation. (C) 1998 Elsevier Science B.V.

引用

页码：599 / 602

页数：4

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